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SPEC NO: DSAM9666 REV NO: V.1A DATE: APR/19/2013
PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Q.M.Chen ERP:
1301000158
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
* Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3. Wavelength value is traceable to the CIE127-2007 compliant national standards.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min. Typ.
SA10-21EWA High Efficiency Red (GaAsP/GaP) White Diffused
14000 23000
*3600 *6500
Rt.Hand Decimal
Common Anode,
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength High Efficiency Red 627 nm IF=20mA
λD [1] Dominant Wavelength High Efficiency Red 617 nm IF=20mA
Δλ1/2 Spectral Line Half-width
High Efficiency Red 45 nm I
F=20mA
C Capacitance High Efficiency Red 15 pF VF=0V;f=1MHz
VF
[2]
Forward Voltage
(DP)
High Efficiency Red
4.0
(2.0)
5.0
(2.5)
V IF=20mA
IR
Reverse Current
(Per chip)
High Efficiency Red
10
(10)
uA
VR=5V
(V
R=5V)
Parameter High Efficiency Red Units
Power dissipation
(DP)
150
(75)
mW
DC Forward Current 30 mA
Peak Forward Current [1] 160 mA
Reverse Voltage
(Per chip)
5
(5)
V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds
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